symbol v ds v gs i dm i ar e ar t j , t stg symbol typ ma x 20 25 50 60 r jc 1.8 2.5 5.0 w t a =70c 3.2 w junction and storage temperature range a p d c 60 30 -55 to 175 t c =100c i d continuous drain current b maximum units parameter t c =25c h t c =100c 40 maximum junction-to-ambient a steady-state 50 48 100 avalanche current c 30 power dissipation a t a =25c p dsm c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current c power dissipation b t c =25c gate-source voltage drain-source voltage maximum junction-to-case d steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w a repetitive avalanche energy l=0.3mh c 135 mj a t a =70c 13 continuous drain current a t a =25c i dsm 17 AOL1454 n-channel enhancement mode field effect transistor features v ds (v) = 40v i d = 50a (v gs = 10v) r ds(on) < 9m ? (v gs = 10v) r ds(on) < 13m ? (v gs = 4.5v) esd protected uis tested rg,ciss,coss,crss tested general description the AOL1454 uses advanced trench technology to provide excellent r ds(on) , low gate charge. it is esd protected. this device is suitable for use as a low side switch in smps and general purpose applications. standard product AOL1454 is pb-free (meets rohs & sony 259 specifications). ultra so-8 tm top view bottom tab connected to drain fits soic8 footprint ! s g d g d s alpha & omega semiconductor, ltd. www.aosmd.com
AOL1454 symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 u a v gs(th) 123v i d(on) 100 a 7.5 9.0 t j =125c 10 10.3 13 m ? g fs 47 s v sd 0.7 1 v i s 50 a c iss 1600 1920 pf c oss 320 pf c rss 100 pf r g 3.4 ? q g (10v) 22 nc q g (4.5v) 10.5 nc q gs 4.2 nc q gd 4.8 nc t d(on) 6.5 ns t r 12.5 ns t d(off) 33 ns t f 16 ns t rr 31 ns q rr 33 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =20v, f=1mhz switching parameters gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge reverse transfer capacitance i s =1a,v gs =0v v ds =5v, i d =20a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v gs =10v, i d =20a v gs =4.5v, i d =20a i dss ua gate threshold voltage drain-source breakdown voltage i d =250ua, v gs =0v zero gate voltage drain current gate-body leakage current v ds =v gs i d =250 a v ds =40v, v gs =0v v ds =0v, v gs = 20v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions total gate charge v gs =10v, v ds =20v, i d =20a on state drain current maximum body-diode continuous current input capacitance output capacitance dynamic parameters m ? v gs =10v, v ds =5v body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ s turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =1 ? , r gen =3 ? turn-off fall time turn-on delaytime i f =20a, di/dt=100a/ s a : the value of r ja is measured with the device in a still air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using t 10s junction-to-ambient thermal resistance. b. the power dissipation pd is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. the maximum current rating is limited by bond-wires. rev0: oct 2006 alpha & omega semiconductor, ltd. www.aosmd.com
AOL1454 typical electrical and thermal characteristics i d =250ua, v gs =0v v ds =40v, v gs =0v 100 ua 500 150 60 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 v gs (volts) figure 2: transfer characteristics i d (a) 6 7 8 9 10 11 12 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =5a v gs =10v i d =20a 5 10 15 20 25 30 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 4v 10v 5v v gs =3.5v -40c -40c 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AOL1454 typical electrical and thermal characteristics i d =250ua, v gs =0v v ds =40v, v gs =0v 100 ua 500 150 60 0 2 4 6 8 10 0 4 8 12162024 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss v ds =20v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =2.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c tc=25c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10ms 1m dc r ds(on) limited t j(max) =175c t c =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
AOL1454 typical electrical and thermal characteristics i d =250ua, v gs =0v v ds =40v, v gs =0v 100 ua 500 150 60 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 20 40 60 80 100 120 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) t a =25c 0 10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note g) power (w) t a =25c t a =150c alpha & omega semiconductor, ltd. www.aosmd.com
|
